The Superiority of iST
Case Sharing
- Failure analysis of semiconductor components (14 nm achievable)
- Anomaly Analysis of semiconductor production lines
- Epitaxy and structural analysis of thin films
- Voltage contrast test
- TEM specimen preparation
- Nanoscale structure preparation
Thermo Fisher Scientific Helios 5
- Maximum Size Of Sample:150mm
- 150mm2 SDD EDS Detector For Instant EDS Analysis.
- Equipped with high speed EBSD detector, the crystal information along with elemental analysis could be acquired simultaneously.
- For Observation Areas With A Width Greater Than 100um Or A Depth Of 50um Theis Recommended For Its Faster Cutting Speed.
E-beam | I-beam | |
---|---|---|
Resolution | 0.6 nm at 15 kV 1.2 nm at 1 kV | 4 nm at 30 kV |
Accelerate Voltage | 350 V - 30 kV | 500 V – 30 kV |
Probe current | 0.8 pA – 100 nA | 1.1 pA – 65 nA |

Contact Window | Mr. Lin/Weijui | Tel:+886-3-5799909#6166 | Email:web_ma@istgroup.com