TEM (Transmission Electron Microscopy) is an analysis device for observation the micro structure of material and lattice defects. By imaging ultra-thin sample with high-energy electron beams, its resolution is down to 0.1nm (the scale of atom).
The Superiority of iST
Case Sharing
High resolution atom image
Advanced process FINFET image
28nm HKMG transistor TEM image
28nm HKMG transistor EDS mapping
28 nm HKMG Transistor EDS line-scan
3D V-NAND Flash structure analysis
3D V-NAND Flash EDS line scan Analysis
LED QW and N spacer epitaxy structure
EDS elemental analysis of LED QW structure
Horizontal direction
Vertical direction
- Micro structure analysis (lattice image).
- Crystalline defect analysis.
- Element ingredient analysis.
- Thin film stress analysis.
- Electron diffraction analysis.
- Impurity and pollutant analysis.
- Auto Metrology Analysis.
- Semiconductor industry
- LED industry
- Optoelectronics industry
- MEMS industry
FEI Talos-F200
Image | TEM resolution: 0.1nm STEM resolution: 0.16nm |
EDS | Detector: SDD 30 mm2 x 4 Solid angle: 0.95 |
Other functions | Piezo stage + DCFI 4K x 4K CCD |
JEOL JEM-2800F
Image | TEM resolution: 0.1nm STEM resolution: 0.2nm |
EDS | Detector: SDD 100 mm2 x 2 Solid angle: 1.7 |
Other functions | Strain mapping 4K x 4K CCD |
JEOL JEM-2100F
Image | TEM resolution: 0.1nm STEM resolution: 0.2nm |
JEOL JEM-F200
Image | TEM resolution: 0.1nm STEM resolution: 0.16nm |
EDS | Detector: SDD 100 mm2 x 2 Solid angle: 1.7 |
Other functions | Strain mapping 4K x 4K CCD |
Contact Window | Mr. Wang/Jay | Tel:+886-3-5799909#6161 | Email:web_ma@istgroup.com