Conductive holes and pads are formed on the IC surface by way of FIB, and then they are connected with metal wires through special bonding to form conductive paths.
What can iST do for you
To reduce parasitic resistance with long wiring requirement
To measure the internal nodes of your chip more easierLow-resistance connecting wire
taking 1000um as an example, the surface connection wire using iST’s N-FIB has a resistance less than 10 ohm, which is unattainable in a conventional FIB (7000ohm (PT)).
Signal extraction
use N-FIB technique to take out signals through silver metal connecting wires. IC designer is enabled to measure the signal by direct contact with the external silver wires. In addition, the resistance and conductance in the entire connection path are lower, more stable and reusable in comparison with conventional probe measurements.
Addition of passive components
iST’s N-FIB enables direct addition of resistances or capacitors of various specifications on the IC surface, facilitating the IC designer with easy debugging.
The Superiority of iST
| Superiority Comparison | N-FIB | Conventional FIB |
|---|---|---|
| R esistance with long wiring (1000 μ m) | 1 Ω± 10% | 7000 Ω± 10% |
| Parasitic capacitance | ＜ 200fF | Less |
| Parasitic inductance | ~0.5nH/mm | Less |
| Current limit | Less | Possible |
| Power line | 1A | 3mA |
| Insert device | Yes | No |
Case Sharing
- Low resistance wiring
- Less damage by ion bombardment
- Suitable for high current/ power application
- Insert passive device precisely
Contact Window | Mr. Wang/Chino | Tel: +886-3-5799909#6000 | Email: web_fib@istgroup.com