The principle of Plasma FIB (P FIB) is similar to Dual Beam FIB (DB FIB), the difference is as follows:
| Ion source | Xe+ Ion plasma | Ga+ Ion |
|---|---|---|
| (Probe current) | 1.5 pA~2.5 μA | 1.1 pA~65 nA |
- Ga Ions used by DB FIB tend to attach to the sample surface; instead, Xe used by P FIB reduces sample contamination by Ga Ions.
- P FIB is capable of running over large areas more than 20 times faster than DB FIB.
Among four major sectioning methodologies, which one is best for your sample?
Improved delayering techniques for better fault isolation efficiency of advanced process chip
Ideal cross section analysis tool for structural inspection of sizes greater than 100um
Exclusive Test Methods Get TIM Defects Checked Quickly
What can iST do for you
iST launches its industry advanced Thermo Fisher Scientific Helios 5 Plasma FIB (PFIB). With more than 20 times faster etching rate compared with small Dual-Beam FIB and high resolution SEM, PFIB can pinpoint nanoscale characteristics or defects in areas of size up to hundreds of um.
For small areas and local cross section analysis, it’s better to stick with Dual-Beam FIB for its cutting-while-shooting capacity and fast structure diagram availability. However, for large area structure observation (with cross sections size greater than 100um or depth greater than 50um), the PFIB not only far outperforms with more than 20 times faster etching rate and more accurate analysis results, but also comes without the drawbacks of structural damage and poor positioning due to grinding stress suffered by the conventional grinding approach.
Case Sharing
Full solder bump image
Local area observation available
PFIB features good etching efficiency in a large range for fast and complete presentation of multiple TSV structures.
With plasma etching can grind off large size structure layer by layer.
- Large range structural observation (100μm or more) including 3D, TSV, solder ball, Cu pillar, and packaging products (WLCSP FA), etc.
- Delayer application for advanced processing of 28nm or narrower.
Thermo Fisher Scientific Helios 5 PFIB
- E-beam Resolution：0.7nm @ 1 kV
- I-beam Resolution：<20nm @ 30 kV
- I-beam Max Current：2.5 μA
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