Thermal EMMI uses detector made of InSb to receive thermal radiation generated by a defective point after power-on, therefore positioning the defect; or, even estimating the depth of defect via time difference of thermal radiation transmission.
Thermal EMMI (InSb) – Easy spotting of defects without de-capsulation, applicable to 3D packaged products.What iST can do for you?
- Detect the defect caused short-circuits inside IC packaging as well as sole die.
- Current Leakage of dielectric layer (e.g.SiO2).
- Current Leakage in transistors and diodes.
- Metal circuit defects and short-circuits in TFT LCD Panel & PCB/PCBA.
- ESD latch-up.
- Estimation the depth of the defect in 3D packaging (stacked die).
- Defect positioning detection over non-decapped ICs
- Failure analysis over low impedance short circuit (<10ohm)
The Superiority of iST
Case Sharing
IC Top Marking is seen clearly at low level of magnification.
In extremely low impedance of short-circuit samples, InGaAs & OBIRCH are unable to detect the hot spot. Yet Thermal EMMI successfully images the hot spot, with coordinates of the hot spot measured for future delayering or cross-section positioning.
IC defect can be clearly shown by hot spot imaging without de-capsulation of the IC, clarifying whether it is a die defect or packaging defect.
Short-circuit in PCB can also be revealed by hot spot imaging.
Effect of doping on transmission through silicon:
Transmission for 100um SI and different doping levels
- IC semiconductor industry
- TFT LCD panel industry
- PCB/PCBA industry
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