Thermal EMMI uses detector made of InSb to receive thermal radiation generated by a defective point after power-on, therefore positioning the defect; or, even estimating the depth of defect via time difference of thermal radiation transmission.
The Superiority of iST
IC Top Marking is seen clearly at low level of magnification.
In extremely low impedance of short-circuit samples, InGaAs & OBIRCH are unable to detect the hot spot. Yet Thermal EMMI successfully images the hot spot, with coordinates of the hot spot measured for future delayering or cross-section positioning.
IC defect can be clearly shown by hot spot imaging without de-capsulation of the IC, clarifying whether it is a die defect or packaging defect.
Short-circuit in PCB can also be revealed by hot spot imaging.
Effect of doping on transmission through silicon:
Transmission for 100um SI and different doping levels
- IC semiconductor industry
- TFT LCD panel industry
- PCB/PCBA industry
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