The Superiority of iST
Case Sharing
- Failure analysis of semiconductor components (14 nm achievable)
- Anomaly Analysis of semiconductor production lines
- Epitaxy and structural analysis of thin films
- Voltage contrast test
- TEM specimen preparation
- Nanoscale structure preparation
FEI Helios NanoLab 660
- Maximum size of sample:150mm
- 150mm2 SDD EDS detector for instant EDS analysis.
- MultiChem gas system to receive up to six sediments or stain gases.
- For observation areas with a width greater than 100um or a depth of 50um theis recommended for its faster cutting speed.
E-beam | I-beam | |
---|---|---|
Resolution | 0.6 nm at 15kV 0.7 nm at 1 kV | 4.0 nm at 30 kV |
Accelerate Voltage | 20 V – 30 kV | 0.5 kV – 30 kV |
Probe current | 0.8 pA – 100 nA | 0.1 pA – 65 nA |

Contact Window | Mr. Lin/Weijui | Tel:+886-3-5799909#6166 | Email:web_ma@istgroup.com