Connect internal IC circuit or contact layer with the SEM microscope’s extremely small curvature probe, interfacing with the external electrical measurement equipment for signal input and electrical characteristics curve as well as for relevant application analysis, including electron beam induced current (EBIC), electron beam absorbed current (EBAC) and electron beam induced resistance change (EBIRCH) by SEM electronic beam.
The Superiority of iST
Make electrical characteristics curve measurement in SEM vacuum environment over IC samples de-layered to the contact layer.
Position failures at contact layer with EBIC for more accurate defect positioning.
Use EBAC to position the open circuit
- Components’ electric characteristics analysis
- Components’ quality and failure analysis