Cycling Endurance Test (CET): Erase and program non-volatile memory for given number of times under high and normal temperature conditions to test its capacity against wear by repeated write-in and read-out operations.
Data Retention Test: Save data in non-volatile memory element before retrieving them under conditions of high temperature by baking and normal temperature to validate its data retention capacity.
Test Conditions
| Stress | Ref. | Abbv. | Conditions | Requirements Lots/SS per lot | Requirements Duration/Accept |
|---|---|---|---|---|---|
| Nonvolatile Memory 125 °C Uncycled High Temperature Data Retention | JESD22-A117 | UCHTDR | FGCT: TA Nonvolatile Memory 125 °C PCM: TA 90 °C | 3 Lots / 77 units | 1000 hrs / 0 Fail / note(a) |
| Nonvnlatile Memory Cycling Endurance | JESD22-A117 | NVCE | 25 °C and 85 °C ≥TJ 55 °C | 3 Lots / 77 units | Up to Spec. Max Cycles per note (b) / 0 Fails |
| Up to Spec. Max Cycles per note (b) / 0 Fails | JESD22-A117 | PCHTDR | FGCT: Option 1: TJ = 100 °C PCM: Option 1: TJ = 90 °C ------------ FGCT : Option 2: TJ 125 °C PCM: Option 2: TJ 100 °C | 3 Lots / 39 units | Cycles per NVCE(55 °C) / 96 and 1000 hrs / 0 Fail /note (c) -------------- Cycles per NVCE(55 °C) / 10 and 100 hrs / 0 Fail / note (c) |
| Nonvolatile Memory Low-Temperature Retention and Read Disturb | JESD22-A117 | LTDR | TA = 25 °C | 3 Lots / 38 units | Cycles per NVCE(25 °C) / 500 hrs / 0 Fail / note (d) |
Follow JESD 47 Table 1a
Failure Model
- Cycling Endurance Test
- Failed to erase/program the non-volatile memory for number of times given in its datasheet
- Failed to erase/program the non-volatile memory in number of times given in its datasheet
- Data Retention Test
- Failed to reach data retention time given in datasheet of the non-volatile memory
- Error of data saved in the non-volatile memory due to loss of charge or capacitive coupling failure
The Superiority of iST
- Successful experience in executing non-volatile memory retention test for multiple leading memory manufacturers
- Capable of assisting customer in programming test pattern for Flash and DDR3/DDR4/LPDDR2 HTOL/ELFR
Reference specification
- JESD 47 / JESD22-A117 / JESD22-A103 / JESD22-A108
- AEC-Q100 / AEC-Q100-005
- Automotive, consumer electronic, commercial, industrial