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Emission Microscopy (EMMI)
 

The Emission Microscope (EMMI) has been proven a highly efficient diagnosis means for failure analysis of semiconductor components. EMMI consists of a highly-sensitive CCD capable of detecting photons emitted when the electron/electric-hole pair reunites in the device, a faint light of a wavelength between 350 nm ~ 1100 nm. EMMI is used extensively nowadays for detecting leakage current resulting from device defects, e.g., Gate oxide defects / Leakage, Latch Up, ESD Failure, junction Leakage, etc.

EMMI spot
 

Conditions where light spots are detected:
Defects that produce light spots - Junction Leakage; Contact spiking; Hot electrons; Latch-Up; Gate oxide defects / Leakage(F-N current); Poly-silicon filaments; Substrate damage; Mechanical damage and Junction Avalanche; etc. 
Light spots that existed originally - Saturated/ Active bipolar transistors; -Saturated MOS/Dynamic CMOS; Forward biased diodes/Reverse biased diodes (break down); etc.

Conditions where light spots cannot be detected:
Defects without light spots - Ohmic shorts and Metal shorts. 
Light spots being blocked - Buried Junctions and Leakage sites under metals.

Machine limitations:
Limited by lens rotation angles, a maximum of 4 probe manipulators (4 probe tips) can be installed on the stage. Maximum height of sample: 10 cm. Requires totally-dark-chamber operation without the existence of light emitting devices.

EMMI、hot spot、emission
邱先生/Shaun
+886-3-5799909#6788
web_EFA@istgroup.com
Please contact nearest location for inquiries :
USA Taiwan ─ Hsinchu China ─ Shanghai Kunshan Beijing Shenzhen Japan
Other services you may be interested in:
 
InGaAs EMMI
Optical Beam Induced Resistance Change (OBIRCH)
 


 
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