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Nano Prober
 

When IC process gets miniature and density of components becomes high, micro-area electrical measurement becomes an inevitable technology in IC development. The Nano-probing technique, which uses high magnification observation of the Scanning Electron Microscope (SEM), directly provides electrical curves of single transistors when combined with Keithley 4200 measurement system and controlled by a nano-controller.

Compared with Conductive Atomic Force Microscopy (CAFM), SEM offers quick identification of locations of interest due to the real-time image capability. Additionally, conducting electrical measurements in the vacuum environment of SEM can avoid interference from external noises, providing direct and prompt information to assist failure analyses and nanoscale developments of semiconductor components.

 Applications:
   Electrical Analysis of Components
   Quality control and failure analysis of components
   Study of Micro-Mechanical-Electrical and Microstructured IC Mechanisms

Machine specifications / Limitations:
Field Emission Scanning Electron Microscope
    [Brand and model number]: JSM-6700F (JEOL)
 Current and voltage measuring system
    [Brand and model number]: Keithley Model 4200-SCS
Micro-probe Electrical Measuring System
    [Brand and model number]: Zyvex

  Range of Movement Resolution
Coarse adjustment X, Y, Z-axis:12mm 100 nm
Micro-adjustment X, Z-axis: 100 µm; Y-axis:10 µm 5 nm
Operation Envronment 10-4 Pa or less
Probe tip diameter < 50nm
Probe material Tungsten
Max. number of probers 4 channels

 

Contact Probing:
IC sample delaminated to contact layer, measured for electrical features in vacuum environment in SEM.
 

 
Family of Curves (Drain Sweep):
Vds vs. Ids curve
When fixing Vgs of a transistor, Ids varies when Vds changes, forming a “Vds vs. Ids” curve. If the fixed Vgs is also varied, multiple curves (one for each Vgs) can be obtained, offering important curves for studying transistor characteristics.
 
 
Gate Voltage Sweep:
Vgs vs. Ids curve
When fixing Vds of a transistor, Ids varies when Vgs changes, forming a “Vgs vs. Ids” curve.

This curve can be used for studying how the carriers (electrons or “electric holes”) in the channel are raised to the conducting zone. Both the critical voltage at which a channel is formed and the critical voltage of a linear zone can be measured, providing important curves for the study of transistor characteristics.
 
nano prober、zyvex、nano probing
張先生/Chiru
+886-3-5799909#6613
web_pfa@istgroup.com
Please contact nearest location for inquiries :
USA Taiwan ─ Hsinchu China ─ Shanghai Kunshan Beijing Shenzhen Japan
Other services you may be interested in:
 
Keithley Parameter Analyzer
Auto Curve Tracer
Prober (Prober Station)
HP4156 Parameter Analyzer
Scanning Electron Microscope(SEM)
 


 
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