When IC process gets miniature and density of components becomes high, micro-area electrical measurement becomes an inevitable technology in IC development. The Nano-probing technique, which uses high magnification observation of the Scanning Electron Microscope (SEM), directly provides electrical curves of single transistors when combined with Keithley 4200 measurement system and controlled by a nano-controller.
Compared with Conductive Atomic Force Microscopy (CAFM), SEM offers quick identification of locations of interest due to the real-time image capability. Additionally, conducting electrical measurements in the vacuum environment of SEM can avoid interference from external noises, providing direct and prompt information to assist failure analyses and nanoscale developments of semiconductor components.
Electrical Analysis of Components
Quality control and failure analysis of components
Study of Micro-Mechanical-Electrical and Microstructured IC Mechanisms
Machine specifications / Limitations:
Field Emission Scanning Electron Microscope
[Brand and model number]: JSM-6700F (JEOL)
Current and voltage measuring system
[Brand and model number]: Keithley Model 4200-SCS
Micro-probe Electrical Measuring System
[Brand and model number]: Zyvex
||Range of Movement
||X, Y, Z-axis：12mm
||X, Z-axis: 100 µm; Y-axis:10 µm
||10-4 Pa or less|
|Probe tip diameter
|Max. number of probers
IC sample delaminated to contact layer, measured for electrical features in vacuum environment in SEM.
||Family of Curves (Drain Sweep)：|
Vds vs. Ids curve
When fixing Vgs of a transistor, Ids varies when Vds changes, forming a “Vds vs. Ids” curve. If the fixed Vgs is also varied, multiple curves (one for each Vgs) can be obtained, offering important curves for studying transistor characteristics.
||Gate Voltage Sweep：|
Vgs vs. Ids curve
When fixing Vds of a transistor, Ids varies when Vgs changes, forming a “Vgs vs. Ids” curve.
This curve can be used for studying how the carriers (electrons or “electric holes”) in the channel are raised to the conducting zone. Both the critical voltage at which a channel is formed and the critical voltage of a linear zone can be measured, providing important curves for the study of transistor characteristics.