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Transmission Electron Microscopy(TEM)
 
TEM, the most powerful material analysis equipment as its best image resolution can reach to 0.1nm, which is capable of analysis of fine structures, crystalline defects, and chemical compositions of materials. The TEM owned by iST is also equipped with EDS, HAADF (ZC), and stress analysis, which can acquire structural and compositional information on atomic scales to address various process issues for the clients.

The Superiority of iST TEM
     Market-leading TEM analysis technique has hit the 5nm technology node.
     Fast delivery: operating 24 hours a day by 3 shifts.
     The cutting-edge TEM equipment of FEI, JEOL for your selection.
     The power of TEM sample preparations: iST installs total 8 FEI Helios 660 Dual-beam FIB, which is the most advanced model in industry and dedicated to working with the new ion polishing tool that can effectively eliminate sample damage (with energy of ion beam as low as 100eV), which can produce TEM images of the highest quality.

TEM Services:
     Micro structure analysis (lattice image).
     Crystalline defect analysis.
     Element ingredient analysis.
     Thin film stress analysis.
     Electron diffraction analysis.
     Impurity and pollutant analysis.

Machine Model / Specifications:
 
FEI Talos-F200

Image

 TEM resolution: 0.1nm
 STEM resolution: 0.16nm

EDS

 Detector: SDD 30 mm2 x 4
 Solid angle: 0.95

Other functions

 Piezo stage + DCFI
 4K x 4K CCD


 
JEOL JEM-2800F

Image

 TEM resolution: 0.1nm
 STEM resolution: 0.2nm

EDS

 Detector: SDD 100 mm2 x 2
 Solid angle: 1.7

Other functions

 Strain mapping
 4K x 4K CCD


 
JEOL JEM-2100F

Image

 TEM resolution: 0.1nm
 STEM resolution: 0.2nm


 
 High resolution TEM image analysis
 
Advanced process FINFET image    High resolution atom image 


 High resolution TEM &EDS image analysis
 
28nm HKMG transistor TEM image    28nm HKMG transistor EDS mapping 
28 nm HKMG Transistor EDS line-scan 


 3D V-NAND Flash Analysis
 
3D V-NAND Flash structure analysis    3D V-NAND Flash EDS line scan analysis 


 LED Epitaxy structure analysis
 
LED QW and N spacer epitaxy structure    EDS elemental analysis of LED QW structure 


 Stress Analysis


TEM、transmission electron microscopy、dislocation
王先生/Jay
+886-3-5799909#6161
web_ma@istgroup.com
Please contact nearest location for inquiries :
USA Taiwan ─ Hsinchu China ─ Shanghai Kunshan Beijing Shenzhen Japan
Other services you may be interested in:
 
Scanning Electron Microscope(SEM)
Dual-beam FIB
Atomic Force Microscopy (AFM)
Secondary Ion Mass Spectrometry(SIMS)
 


 
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