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Scanning Electron Microscope(SEM)
 

Principle:
The Scanning Electron Microscope (SEM) uses optoelectronic system to focus electrons generated by an electronic gun onto a small spot on the sample surface. This beam of electrons will then interact with the sample material to generate secondary electrons, back scatter and signature X-Ray etc.

A scan coil is then placed on sample surface to pick up those signals. The SEM works by collecting secondary electrons to form an image. Because the SEM has high resolution, the maximum magnification can reach over 100,000 times, and large depth of field, its primary use is in observing sample surface and cross section micro structure.

When the SEM tool is equipped with an Energy Dispersive Spectrometer (EDS), it can also be used to provide micro (region) material analysis of the sample surface. This includes qualitative, semi-qualitative element analysis and specific regional analysis of point, line scan & mapping.

The Superiority of iST
iST has multiple main stream Field-Emission SEM (FE-SEM):Verios460L、SU8020、SU8220、Jeol 6700F、Hitachi S-4700 all equipped with EDS (SDD detector). Apart from providing the highest resolution surface structure image, they are also capable of material composition analysis at a rapid pace.

Application:
   Observation of material’s surface micro structure. 
   It is possible to provide precise dimensional measurement such as film thickness etc by using SEM's build in measurement tool. 
   EDS can provide qualitative or semi-qualitative element analysis of the surface sample as well as point, line scan or mapping analysis of the specified region; The SDD detector can even improve the Mapping of spatial resolution under low voltage. 
   SEM imaging with layer removal technique (de-process) can provide useful clue for reverse engineering of electrical circuits. 
   Using low energy electron beam for Passive Voltage Contrast (PVC) can point out the precise location of electrical leakage or bad contact. Such info can be used for failure analysis.

Equipment spec / limitation:
  
FEI verios460L

Electron gun

Schottky FE

Resolution

0.6nm (accelerating voltage 15kV) ,0.7nm(accelerating voltage 1kV)

Magnification

45~800k

Accelerating voltage

0.5~30kV


 
HITACHI SU8020

Electron gun

Cold FE

Resolution

1.0nm (accelerating voltage15kV) ,1.3nm(accelerating voltage 1kV)

Magnification

30~800k

Accelerating voltage

0.1~30kV


 
HITACHI SU8220

Electron gun

Cold FE

Resolution

0.8nm (accelerating voltage15kV) ,1.1nm(accelerating voltage1kV)

Magnification

20~1000k (vary with WD, HV)

Accelerating voltage

0.01~30kV


 
JEOL 6700-F

Electron gun

Cold FE

Resolution

1.0nm (accelerating voltage 15kV) ,2.2nm(accelerating voltage 1kV)

Magnification

25~650k

Accelerating voltage

0.5~30kV


 
Surface Micro Structure
 
 

IC Cross Section View: Can be used for process cost analysis.
 

Passive Voltage Contrast (PVC): can be used to check for contact open/short circuit.

EDS Mapping analysis: Shows the element distribution on the surface.

EDS Point Analysis: Under 2kV low voltage, SDD detector can provide element analysis of the surface sample.

SEM、electron beam、voltage contrast

陳先生/Edward
+886-3-5799909#6641
web_pfa@istgroup.com
Please contact nearest location for inquiries :
USA Taiwan ─ Hsinchu China ─ Shanghai Kunshan Beijing Shenzhen Japan
Other services you may be interested in:
 
Cross-section Inspection
Transmission Electron Microscopy(TEM)
Dual-beam FIB
Auger Electron Spectroscopy(AES)
 


 
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